| PART |
Description |
Maker |
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| 2SA1108 |
Silicon PNP Power Transistors MT-200 package
|
Savantic
|
| 2SA1170 |
Silicon PNP Power Transistors MT-200 package
|
Savantic
|
| 2N3905TAR |
PNP General Purpose Amplifier; Package: TO-92; No of Pins: 3; Container: Ammo 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| BD138 BD138-10 BD138-16 BD140 BD140-10 BD140-16 BD |
PNP power transistors
PNP power transistors 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Color:Green; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
PNP power transistor(PNP????朵?绠?
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2N2894AC1B-JQRS.GRPB 2N2894AC1B-JQRS.GRPC 2N2894AC |
200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR
|
TT electronics Semelab, Ltd.
Seme LAB
SEMELAB LTD
|
| 2N3906-AP |
TRANSISTOR PNP GP 40V TO92 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Micro Commercial Components, Corp.
|
| IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培2V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培4V电压，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培2V的，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
| Q60103-X151-D Q60103-X151-F1 Q60103-X151-G Q60103- |
24 V, 200 mA, PNP germanium transistor
PNP GERMANIUM TRANSISTORS 进步党锗晶体
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Siemens Semiconductor G...
|
| MJW3281AG MJW3281A10 MJW1302AG |
Complementary NPN-PNP Silicon Power Bipolar Transistors
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 15 A, 230 V, NPN, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Silicon Power Bipolar Transistors
|
ON Semiconductor
|
| MMFT107T1D MMFT107T3 MMFT107T1 MMFT107 MMFT107T1-D |
Power MOSFET 250 mA, 200 Volts N-Channel SOT-223
Power MOSFET 250 mA / 200 Volts
Power MOSFET 250 mA, 200 Volts 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
ONSEMI[ON Semiconductor]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
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